Meet Inspiring Speakers and Experts at our 3000+ Global Conference Series Events with over 1000+ Conferences, 1000+ Symposiums
and 1000+ Workshops on Medical, Pharma, Engineering, Science, Technology and Business.

Explore and learn more about Conference Series : World's leading Event Organizer

Back

Pavol Hvizdos

Pavol Hvizdos

The Institute of Materials Research of Slovak Academy of Sciences, Slovakia

Title: Development of SiC based nanocomposites with enhanced electrical conductivity

Biography

Biography: Pavol Hvizdos

Abstract

Three principal types of materials were developed and investigated: SiC-TiNbC, SiC-CNT a SiC-graphene. They were compacted using standard hot pressing (HP), spark plasma sintering (SPS), and rapid hot pressing (RHP). Their microstructure, chemical and phase composition were studied in detail, the results showed successful microstructure design and confirmed desired composition. In all cases a reference material, a single phase SiC, prepared by the same ways, was used for comparison. As the base, series of three optimized SiC-TiNbC (with 30, 40 and 50 wt.% of TiNbC) composites were developed. Increase in electrical conductivity by four orders was achieved without compromising the mechanical and tribological properties. Technological tests showed possibilities to machine these materials by electric discharge technique as well as other non-conventional methods. The materials with carbon based nano-fillers included SiC-graphene and SiC-CNT (carbon nanotubes). Methods of their preparation were optimized, mainly to achieve a good distribution of the carbon nano-phases. In SiC-graphene (graphene nano-platelets and reduced graphene oxide up to 5 wt.%) the rapid hot press (RHP) technique was successfully developed and tested and materials with graphene nano-platelets and reduced graphene oxide were produced. Both types reached satisfactory parameters with respect to their microstructure and basic mechanical properties. Their electrical conductivity increased by four orders which clearly shows their potential. In SiC-CNT (with up to 10 wt.% CNT) a new technique of in situ CNT preparation by CCVD was developed. This enabled to solve the problem with distributing of CNTs and in this way to increase the electrical conductivity by about three orders of magnitude.

 

Speaker Presentations

Speaker PPTs Click Here